Influence of the discharge mode on the optical and passivation properties of SiNx:H deposited by PECVD at atmospheric pressure

Remy Bazinette 1 J.F. Lelievre 1 Laura Gaudy 1 Françoise Massines 1
1 PROMES - Procédés, Matériaux et Energie Solaire
Abstract : The cost of industrial silicon solar cells could be greatly reduced by the implementation of PECVD at atmospheric pressure for the deposition of the silicon nitride (SiN) antireflective coating. For a successful development of this vacuum-free process tool, a deep understanding of the plasma discharge mode has to be undertaken. This work focuses on the control of a wide range of plasma excitation conditions in order to obtain homogeneous dielectric barrier discharges (DBD) at atmospheric pressure, and thus dense and uniform SiN layers. The influence of the discharge mode is then studied in order to optimize the optical and passivation properties of the SiN thin films, showing good antireflective properties as well as surface recombination velocities as low as 15 cm.s-1.
Keywords : silicon nitride antireflective and passivation coating atmospheric pressure discharges dielectric barrier discharge (DBD)
Type de document :
Article dans une revue
Energy Procedia, Elsevier, 2016, 92, pp.309-316. 〈10.1016/j.egypro.2016.07.087〉
Liste complète des métadonnées
https://hal-univ-perp.archives-ouvertes.fr/hal-01467741
Contributeur : Dorian Miler <>
Soumis le : mardi 14 février 2017 - 16:29:39
Dernière modification le : jeudi 11 janvier 2018 - 06:22:15

Lien texte intégral

openaccess

Identifiants

Collections

UNIV-PERP | PROMES

Citation

Remy Bazinette, J.F. Lelievre, Laura Gaudy, Françoise Massines. Influence of the discharge mode on the optical and passivation properties of SiNx:H deposited by PECVD at atmospheric pressure. Energy Procedia, Elsevier, 2016, 92, pp.309-316. 〈10.1016/j.egypro.2016.07.087〉. 〈hal-01467741〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

59

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD