Atmospheric Pressure Radio-Frequency DBD Deposition of Dense Silicon Dioxide Thin Film - Archive ouverte HAL Access content directly
Journal Articles Plasma Processes and Polymers Year : 2016

Atmospheric Pressure Radio-Frequency DBD Deposition of Dense Silicon Dioxide Thin Film

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Abstract

Radio-frequency (RF) homogeneous dielectric barrier discharge (DBD) is compared to low frequency glow DBD to make silicon oxide from Ar/NH3/SiH4. RF-DBD is a more powerful discharge, and the growth rate is not limited by precursor dissociation rate but by powder formation. Powders are not deposited in the plasma zone but in the post-discharge due to their trapping by the electric field. Modulation of the RF-DBD is a useful solution to avoid powder formation. Powders are systematically avoided if the plasma energy during time on stays below 750 µJ. RF-DBD modulation also increases the growth rate twofold compare to continuous RF. The optimum growth rate without powder corresponds to a short Ton to limit precursor dissociation, a long Toff to enhance diffusion and a fast repeat frequency to increase deposition rate.

Dates and versions

hal-01467655 , version 1 (14-02-2017)

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Rémy Bazinette, Jean H. Paillol, Jean-François Lelièvre, Françoise F. Massines. Atmospheric Pressure Radio-Frequency DBD Deposition of Dense Silicon Dioxide Thin Film. Plasma Processes and Polymers, 2016, 13 (10), pp.1015-1024 ⟨10.1002/ppap.201600038⟩. ⟨hal-01467655⟩
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