Hydrogenated Silicon Nitride SiNx:H Deposited by Dielectric Barrier Discharge for Photovoltaics - Archive ouverte HAL Access content directly
Journal Articles Plasma Processes and Polymers Year : 2016

Hydrogenated Silicon Nitride SiNx:H Deposited by Dielectric Barrier Discharge for Photovoltaics

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Abstract

Dense hydrogenated silicon nitride (SiNx:H) layers for photovoltaics are made by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD). The dependence of morphology, chemical, optical and passivation properties of the thin films on the plasma reactor configuration, the mode of homogeneous DBD (glow, Townsend, RF, nano pulsed) and the SiH4/NH3 gas flow ratio are investigated. Avoiding gas recirculation, improving thin film homogeneity through the electrode length and the plasma modulation appear as key points. Silicon solar cells made with AP-PECVD SiN antireflective coating have the same efficiency as standard low pressure

Dates and versions

hal-01311830 , version 1 (04-05-2016)

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Cite

Françoise F. Massines, José Silva, Jean-François Lelièvre, Rémy Bazinette, Julien Vallade, et al.. Hydrogenated Silicon Nitride SiNx:H Deposited by Dielectric Barrier Discharge for Photovoltaics. Plasma Processes and Polymers, 2016, 13 (1), p. 170-180. ⟨10.1002/ppap.201500182⟩. ⟨hal-01311830⟩
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