Sputtered Al-doped ZnO transparent conducting thin films suitable for silicon solar cells

Abstract : Highly transparent conducting Al-doped zinc oxide (AZO) thin films have been grown onto p-type porous silicon substrates by RF-magnetron sputtering at room temperature using aluminum doped nanocrystalline powder. The obtained AZO films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The films are highly transparent in the visible wavelength region with a transmittance higher than 85% and an electrical resistivity of 1.56 × 10− 4 Ω·cm was obtained at room temperature. On the other hand, we have studied the position of the p–n junction involved in the In2O3:SnO2/(n)AZO/Si(p) structure, by electron-beam induced current technique. Current density–voltage characterizations in dark and under illumination were also investigated. The cell exhibits an efficiency of 5%.
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Thin Solid Films, Elsevier, 2014, 553, pp.123-126. 〈10.1016/j.tsf.2013.11.120〉
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https://hal-univ-perp.archives-ouvertes.fr/hal-01178075
Contributeur : Olivier Savoyat <>
Soumis le : vendredi 17 juillet 2015 - 13:49:20
Dernière modification le : mercredi 28 février 2018 - 10:23:17

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Z. Ben Ayadi, H. Mahdhi, K. Djessas, J.L. Gauffier, L. El Mir, et al.. Sputtered Al-doped ZnO transparent conducting thin films suitable for silicon solar cells. Thin Solid Films, Elsevier, 2014, 553, pp.123-126. 〈10.1016/j.tsf.2013.11.120〉. 〈hal-01178075〉

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